Webor rupture, which in the worst case could cause rupture of the total SiC/SiC component. Unlike metals that can rupture at creep strains well over 1 percent so that undesirable dimensional changes are typically their life limiting criteria, SiC-based constituents will typically rupture at strains below 1 percent so that WebSiC theoretical Specific On-Resistance (m SiC incl. substrate Ω cm 2) Breakdown Voltage (V) Silicon 6H SiC 4H SiC This figure shows Si, and 4H and 6H SiC. GaAs is a factor 12 better than Si GaN is a factor 2 better than SiC For most power devices the current will be conducted through the substrate. This adds some resistance since
Advances in SiC/SiC Composites for Aero-Propulsion - NASA
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Process Technology for Silicon Carbide Devices - KTH
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